eUSB Flash Drive

The drive employs a sophisticated error correction scheme and flash management utilities to ensure data reliability and endurance. Wear-leveling method delivers even wearing of flash blocks across the entire drive capacity. Background operations track erase counts, prioritize new writes to blocks with lower wear, and relocate static data to blocks with higher wear. Bad-block Management routines replace worn blocks with spare blocks reserved by the controller during initialization. A configurable ECC engine is implemented on the controller chip, which handles error correction on the fly without any performance degradation.

The Wintec eUSB drives offer capacities ranging from 512MB up to 256GB (H8) MLC using industry standard MLC Toggle NAND flash paired with the S2, P3 or H8 flash controllers. The Wintec EUSB drive optimizes writes to the flash memory and implements highly intelligent block management, wear leveling and lifetime management schemes to increase overall drive endurance and reliability.